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phase change memory
Last modified: Tuesday, April 08, 2008
Abbreviated as PCM, phase change memory is a type of
non-volatile memory that is much faster than the common
flash memory,
from 500 to 1,000 times faster, and it also uses up to one half the power. Phase
change memory uses a semiconductor alloy that can be changed rapidly between an
ordered, crystalline phase having lower electrical resistance to a
disordered, amorphous phase with much higher electrical resistance.
Because no electrical power is required to maintain either phase of the
material, so phase-change memory is non-volatile.
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